Effects of adhesive properties on SOI devices obtained by device transfer method

Abstract

The device transfer method for obtaining SOI (silicon-on-insulator) devices with crystallinity similar to that of bulk silicon substrates. The structural feature of SOI devices obtained by the device transfer method is that the adhesive layer below the thin active device layer plays a role as an insulator. The authors describe the effect of mobile ions in the adhesive layer on the drain leakage current characteristics of the SOI devices. NMOSFET/SOI and PMOSFET/SOI with low leakage currents are obtained by the device transfer method using polyimide resin as an adhesive. Low Na/sup +/ content in the polyimide prevents back-channel formation in the SOI devices.<>