Impacts of Dielectric Constant on Performance Study of CNTFET

Abstract

Because of its compact size and unique ballistic, thermal management, and low resistive capabilities, the CNTFET is an efficient semiconductor device. The tiny contact space makes Schottky barriers exceedingly thin, allowing the device to function adequately. Furthermore, the characteristics of ballistic conduction, as well as the deep influence of gate capacitance and the influence of dielectric constant on performance, have contributed gaining its popularity in the emerging nano industry. This investigation exclusively examines the ION current, IOFF current, and their ratio (ION/IOFF) of CNTFETs, which is considerably affected by temperature and gate insulator dielectric constant. A numerical modeling was used to investigate the impact of dielectric permittivity on the functionality of a CNTFET. Furthermore, the CNTFET’s superb mobility and functionality are enabled by its low temperature and excellent dielectric constant.