A 90Gb/s 2:1 multiplexer IC in InP-based HEMT technology

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.993001

Toshihide Suzuki, Y. Nakasha, Tsuyoshi Takahashi, K. Makiyama, Kenji Imanishi, Tatsuya Hirose, Yuu Watanabe

引用次数: 25

Abstract

A 90Gb/s 2:1 multiplexer IC uses 0.13/spl mu/m-gate InP-based HEMT technology. Parallel 2-ch input data are serialized. The differential outputs are 0.7V/sub pp/. The 1.9/spl times/1.8mm/sup 2/ die consumes 1.3W from a -5.2V supply.

查看原文本刊更多论文

基于inp的HEMT技术的90Gb/s 2:1多路复用IC

90Gb/s 2:1多路复用IC采用0.13/spl mu/m栅极基于inp的HEMT技术。并行的2-ch输入数据被序列化。差分输出为0.7V/sub / pp/。1.9/spl倍/1.8mm/sup 2/晶片从-5.2V电源消耗1.3W。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

自引率

0.00%

发文量