Theory of gain in InGaN quantum well lasers

Abstract

To analyze experimental results in group-III nitride lasers, it is necessary to be able to predict their gain spectra accurately. Both excitons and electron hole plasma play important roles in the optical properties of group-III nitride compounds, even under typical lasing conditions of high carrier density and high temperature. Also, inhomogeneous broadening is present, due to localization effects from dimensional or compositional variations in the quantum wells. This paper describes a consistent treatment of the above effects.