A 65-nm CMOS P-well/Deep N-well avalanche photodetector for integrated 850-nm optical

Abstract

A silicon avalanche P-well/Deep N-well photodetectors is fabricated in standard 65-nm CMOS technology without any process modification. By adopting the lightly doped P-well as the P-terminal, a wider depletion region is achieved in a deeper position from the silicon surface. This photodetector achieves a -3-dB bandwidth of 1.1 GHz and a responsivity of 160 mA/W at 12.3 V with 850 nm light input. An integrated receiver using the proposed APD is able to operate at 4 Gbps.