Contribution of the Proton Direct Ionization to the SEU rate for low-scale devices

Abstract

In modern technologies, Single Event Upsets can be induced by Low Energy Protons. This phenomenon has been described in the literature for many years now, considering technology nodes lower than 90 nm. Few complete sets of data are available considering low-scale devices, to assess their sensitivity to the proton direct ionization phenomenon and determine the impact of the technology node. This study proposes to assess the in-orbit impact of the direct ionization phenomenon for devices of a technology node of 45 and 28 nm, fully SEU characterized. The importance of the mechanical environment for the prediction is also discussed, as well as the impact of the straggling effect.