{"title":"Effect of Cd2+ ions on AC conductivity of stearic acid metal-insulator-semiconductor diode","authors":"S. Malik, A. Ray","doi":"10.1063/5.0027229","DOIUrl":null,"url":null,"abstract":"We report on observations of the effect of Cd2+ ions on the AC electrical properties of stearic acid (SA) thin films in metal-insulator-semiconductor (MIS) diode-like structure. The insulating thin film was fabricated using 40-layers Langmuir-Blodgett (LB) films of SA containing Cd2+ ions on hydrophobic n-type silicon (n-Si) substrate. Frequency- dependent capacitance (C-f) and conductance (G/ω-f) characteristics of the Al/SA+Cd2+/Si MIS structure were investigated in dark at room temperature with frequency ranges from 80 kHz to 1 MHz. The capacitance for LB film of stearic acid with Cd2+ ions showed almost no frequency dependence which translated into uniform dielectric value. However, the film AC conductivity shown an exponential frequency-dependent behavior at a signal frequency higher than 100 kHz. The metal-insulator contact resistance is believed to be dominant in the high-frequency range.","PeriodicalId":184238,"journal":{"name":"4TH INTERNATIONAL CONFERENCE ON THE SCIENCE AND ENGINEERING OF MATERIALS: ICoSEM2019","volume":"342 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"4TH INTERNATIONAL CONFERENCE ON THE SCIENCE AND ENGINEERING OF MATERIALS: ICoSEM2019","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/5.0027229","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report on observations of the effect of Cd2+ ions on the AC electrical properties of stearic acid (SA) thin films in metal-insulator-semiconductor (MIS) diode-like structure. The insulating thin film was fabricated using 40-layers Langmuir-Blodgett (LB) films of SA containing Cd2+ ions on hydrophobic n-type silicon (n-Si) substrate. Frequency- dependent capacitance (C-f) and conductance (G/ω-f) characteristics of the Al/SA+Cd2+/Si MIS structure were investigated in dark at room temperature with frequency ranges from 80 kHz to 1 MHz. The capacitance for LB film of stearic acid with Cd2+ ions showed almost no frequency dependence which translated into uniform dielectric value. However, the film AC conductivity shown an exponential frequency-dependent behavior at a signal frequency higher than 100 kHz. The metal-insulator contact resistance is believed to be dominant in the high-frequency range.