The statistics of IC failures for multipulse electromagnetic irradiation

1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363) Pub Date : 1900-01-01 DOI:10.1109/CRMICO.1999.815255

K.B. Vasilyev, A. Klyuchnik, A. V. Solodov

引用次数: 1

Abstract

The results of integrated circuit (IC) failure investigation under electromagnetic irradiation are presented. The probability of IC damage is determined as a function of number of electromagnetic pulses N and intensity of radiation. A theoretical model of the damage accumulation is presented.

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多脉冲电磁辐照集成电路失效统计

给出了电磁辐射下集成电路失效研究的结果。集成电路的损伤概率是电磁脉冲数N和辐射强度的函数。提出了损伤累积的理论模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363)

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