Electrodynamic properties of a magnetic fine-stratified structures

I. Fedorin, A. Bulgakov
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Abstract

Let us consider an infinite periodic structure where semiconductor layers of thickness d1 and dielectric layers of thickness d2 alternate. We ignore the collision frequency in the semiconductor layers and losses in dielectric. We introduce a coordinate system such that the x axis is parallel to the boundaries of the layers and z axis is perpendicular to the layers. We will assume that the structure is homogeneous in the x and y directions and put ∂/∂y = 0 , omitting the dependence on the coordinate y in the equations. Let the structure be exposed to an external magnetic field parallel to the y axis (see Fig.1). Then, Maxwell's equations split into independent equations for two modes with different polarization. External magnetic field doesn't affect the properties of H-waves therefore we will consider E-waves with components Ex, Ez, Ey.
磁性细层状结构的电动力学性质
让我们考虑一个无限周期结构,其中厚度为d1的半导体层和厚度为d2的介电层交替存在。我们忽略了半导体层的碰撞频率和介电损耗。我们引入一个坐标系,使x轴平行于各层的边界,z轴垂直于各层。我们假设这个结构在x和y方向上是齐次的,让∂/∂y = 0,忽略方程中对坐标y的依赖。让结构暴露在平行于y轴的外部磁场中(见图1)。然后,将麦克斯韦方程组拆分为两种不同极化模式的独立方程。外磁场不影响h波的性质,因此我们将考虑含有Ex, Ez, Ey分量的e波。
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