High Current Events Triggered by Heavy Ion Microbeam and Pulsed Laser on a MRAM

M. Mauguet, J. Guillermin, B. Vandevelde, N. Chatry, J. Carron, F. Bezerra
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Abstract

In this work, we investigate events on power consumption in a Magnetic RAM using heavy ion microbeam and pulsed laser. This study was initially motivated by various questions remained opened for MRAM in the literature such as the possibility of its occurrence in flight, its impact on long-term operation or the mitigation techniques. The nature and origin of such current events was also investigated. The spatio-temporal resolution of laser and heavy ion microbeam was useful to locate the sensitive areas and to study the evolution of the current after the event triggering. These test methods also avoid any test artifact related to multiple impacts. Various tests and current mappings were performed, first all over the MRAM, and later specifically in the sensitive areas to investigate the distributions of the sensitive zones and current levels. Complementary tests were performed to clarify the nature of these events.
重离子微束和脉冲激光在MRAM上引发的大电流事件
在这项工作中,我们研究了使用重离子微束和脉冲激光的磁性RAM的功耗事件。这项研究的最初动机是,文献中关于MRAM的各种问题仍未解决,例如其在飞行中发生的可能性、对长期运行的影响或缓解技术。这些时事的性质和起源也进行了调查。激光和重离子微束的时空分辨率有助于定位敏感区域和研究事件触发后电流的演变。这些测试方法还避免了任何与多重影响相关的测试工件。进行了各种测试和电流映射,首先在整个MRAM上进行,然后专门在敏感区域进行,以调查敏感区域和电流水平的分布。还进行了补充试验,以澄清这些事件的性质。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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