Contributions to development of IGBT on SiC technologies

Abstract

A punch through insulated gate bipolar transistor realized on silicon carbide (4H-SiC) is presented. The IGBT chip consists of a parallel connection of ten thousands elementary cells. The cell equivalent circuit is designed with a MOSFET and a bipolar transistor in a Darlington configuration. The IGBT presented in this paper has one epilayer (cheaper), a buffer layer between substrate and epilayer to improve the dynamic characteristics and a guard ring/epilayer junction to increase the saturation current.