High-power GaN-based LEDs for lighting and display applications

Abstract

We review the current state-of-the-art in high-power (>1 W) GaN LED technology, and highlight current challenges in MOCVD epitaxy, device design, and high-volume manufacturing. We also describe recent developments in technology for high-power GaN-based LEDs which are operated beyond 5 W/LED with high efficiency (50 lm/W green, >30 lm/W white) and excellent reliability, and preview future challenges in solid state lighting and display applications.