High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays

Abstract

The photodetector is fabricated simply by spray-coating ZnO QDs on a CuO micro-pyramid array. The p−n junction structure enhances the performance of the DUV n-ZnO/p-CuO/p-Si micro-pyramid device. The photodetector is characterized by high photo-responsivity at 244 nm (UV-C) with fast photoresponse and a cut-off at 280 nm. High self-powered photoresponse is confirmed. These high-performance solar-bind DUV photodetector arrays can be scaled up for mass production of a wide range of applications.