Performance of AlGaN/GaN based Common Drain Dual HEMT (CDD-HEMT) for high power applications

Abstract

In this paper, two- 2DEG channels of AlGaN/GaN HEMT are created with Common Drain on a single GaN substrate for improving high power performance of the device. The results obtained for Common Drain Dual HEMT (CDDHEMT) have been compared with conventional HEMT. The results obtained for CDD-HEMT show higher drain current, current gain, cut-off frequency and transconductance. Drain current of CDD-HEMT is three times greater than conventional HEMT. Transconductance is three times higher in comparasion to conventional HEMT. CDD-HEMT has potential applications in high power high frequency domain.