Design and implementation of four bit arithmetic and logic unit using hybrid single electron transistor and MOSFET at 120nm technology

V. Raut, P. Dakhole
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引用次数: 9

Abstract

Low power design requires optimization at all levels and recent development in nanoscale devices unlock the idea of hybridization due to which power consumption of a system can be controlled. The implementation of hybrid techniques for the designing of four bit arithmetic and logic unit with low power dissipation is presented in these paper. The characteristics of SET as a low power device and MOSFET as a high speed device produces unique innovations, which is not possible to achieve with only CMOS circuit. The basic hybrid gates designed and simulated as well as new XOR gate is designed for reducing the power dissipation in implementation of four bit hybrid arithmetic and logic unit. Three different full adders designed, simulated and compared in terms of power dissipation.
采用120纳米单电子晶体管和MOSFET混合技术的四位算术和逻辑单元的设计与实现
低功耗设计需要在各个层面上进行优化,而纳米级器件的最新发展揭示了杂交的概念,因为它可以控制系统的功耗。本文介绍了采用混合技术设计低功耗的四位算术和逻辑单元。SET作为低功耗器件和MOSFET作为高速器件的特性产生了独特的创新,这是仅用CMOS电路无法实现的。为了降低四位混合运算逻辑单元的功耗,设计并仿真了基本混合门和新型异或门。设计了三种不同的全加法器,并对其功耗进行了仿真和比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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