Custom Fabricated High-Q Analog Dual-Gap RF MEMS Varactors

Abstract

An RF MEMS capacitor design, fabrication and measurement is described. The capacitor's dual gap height architecture allows for continuous electrostatic tuning with low resistive loss and a large tuning range. Two voltage sources are used to reach the full tuning potential of the device. Measurements indicate a capacitance tuning range of 6.2:1 with a quality factor over 50 at 30 GHz for 310 fF.