A 512 Mb NROM flash data storage memory with 8 MB/s data rate

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.992958

E. Maayan, R. Dvir, J. Shor, Y. Polansky, Y. Sofer, I. Bloom, D. Avni, B. Eitan, Z. Cohen, M. Meyassed, Y. Alpern, H. Palm, E.S. v Kamienski, P. Haibach, D. Caspary, Sebastian Riedel, R. Knofler

引用次数: 14

Abstract

The NROM technology is applied to EEPROM, flash, and data storage product lines. All the products are based on the two-bit-per-cell core technology, using common design concepts, algorithms, circuits, and the same process architecture. Differing product requirements emphasize the versatility of the concept.

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数据速率为8mb /s的512mb NROM闪存

NROM技术应用于EEPROM、闪存和数据存储产品系列。所有产品都基于每单元2位的核心技术，使用共同的设计概念、算法、电路和相同的工艺架构。不同的产品需求强调了概念的多功能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

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