Influence of RF Breakdown Plasma on Dispersion Relation of High Frequency Structures and Characteristics of Generated Microwave in Relativistic Backward Wave Oscillators

Yuzhang Yuan, Jin Meng, Jun Zhang, Danni Zhu, Yancheng Cui
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Abstract

High power, long pulse and high repetition rate are the developing direction of high power microwave (HPM) system. The relativistic backward wave oscillator (RBWO) is considered to be a promising device for the future application among many kinds of microwave sources due to its potential of large power capacity, high beam-wave interaction efficiency and good operation stability. With decades of development, the HPM system nearly operates at its limiting parameters of all aspects (cathode, high frequency structure, electron beam collector and microwave output window). Among these limitation factors, The Radio Frequency breakdown (RF breakdown) of the slow wave structures (SWSs), which will lead to the generation of the RF breakdown plasma, is an important cause for pulse shortening and power decaying in RBWOs.Although many researchers have performed some valuable studies about this issue, further researches of the influence mechanism of RF breakdown on the microwave generation are still needed.In this paper, we consider the RF breakdown plasma will influence the microwave generation in two ways. One is the plasma brought by RF breakdown will influence the quality of electron beam and absorb microwave energy. The other is the RF breakdown plasma will change the electrodynamic property of the SWSs in some degree by influencing the dispersion relation, which leads to the microwave sources operate at an improper condition. Theoretical analysis, numerical calculation and particle in cell (PIC) simulations are conducted to verify our conclusion. The results obtained are helpful in explaining the RF breakdown phenomenon physically and can provide some design guidance.
射频击穿等离子体对相对论后向波振荡器高频结构色散关系及产生微波特性的影响
大功率、长脉冲和高重复频率是大功率微波系统的发展方向。相对论性倒向波振荡器(RBWO)具有功率容量大、波束相互作用效率高、工作稳定性好等优点,被认为是未来多种微波源中应用前景广阔的器件。经过几十年的发展,HPM系统在各方面(阴极、高频结构、电子束收集器和微波输出窗口)几乎都处于极限参数。在这些限制因素中,慢波结构(SWSs)的射频击穿(RF击穿)将导致射频击穿等离子体的产生,是rbwo中脉冲缩短和功率衰减的重要原因。虽然许多研究者已经对此进行了一些有价值的研究,但射频击穿对微波产生的影响机制还需要进一步的研究。本文认为射频击穿等离子体从两个方面影响微波的产生。一是射频击穿产生的等离子体会影响电子束的质量,吸收微波能量。二是射频击穿等离子体通过影响色散关系,在一定程度上改变了SWSs的电动力学特性,导致微波源工作在不合适的条件下。理论分析、数值计算和粒子池(PIC)模拟验证了我们的结论。所得结果有助于从物理上解释射频击穿现象,并可提供一定的设计指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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