P. Acquafredda, E. Bisceglie, D. Bottalico, R. Brescia, M. Brigida, G. Caliandro, M. Capitelli, G. Casamassima, T. Cassano, R. Celiberto, G. Cicala, V. Crismale, A. De Giacomo, O. De Pascale, C. Favuzzi, G. Ferraro, P. Fusco, F. Gargano, N. Giglietto, F. Giordano, C. Gorse, V. Laporta, S. Longo, F. Loparco, B. Marangelli, M. Mazziotta, N. Mirizzi, M. Muscarella, M. Nitti, A. Rainò, A. Romeo, G. Senesi, P. Spinelli, A. Valentini, G. Verrone
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引用次数: 0
Abstract
The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH4 in H2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 µm thick having different grain size. Dark current-voltage (I–V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.
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