Characterization and performance evaluation of CMOS based photodetectors

2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497) Pub Date : 2000-07-24 DOI:10.1109/LEOSST.2000.869678

S. Konanki, F. Beyette

引用次数: 9

Abstract

The design, characterization and evaluation of silicon photodetectors suitable for smart pixel based applications are presented. Several different CMOS based photodetector structures are presented including p-n junction detectors and bipolar phototransistors.

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CMOS光电探测器的特性与性能评价

介绍了适合智能像素应用的硅光电探测器的设计、表征和评价。介绍了几种不同的CMOS光电探测器结构，包括p-n结探测器和双极光电晶体管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497)

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