Y. Wee, Soo-Geun Lee, Won-sang Song, Kyoung-Woo Lee, N. Lee, J.E. Ku, Ki-kwan Park, Seung Jin Lee, Jae Hak Kim, J. Chung, Hong-jae Shin, S. Hah, Ho-Kyu Kang, G. Suh
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引用次数: 0
Abstract
Despite the initial success in integrating a 90 nm Cu/SiOC (k=2.9) device using the HSQ via-filler scheme, the reliability issues remain. By correlating electromigration (EM) with the moisture blocking capability of the dielectric-diffusion-barrier, we target the factors contributing to the moisture blockage, namely, the N and H-content within SiC. Consequently, increasing the N/H ratio in the SiCN film, we demonstrated a significant enhancement in EM reliability.
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