Characterization of DGFET properties from multiscale modeling: Effects of oxide thickness and temperature

Abstract

In MOSFET devices technology, many difficulties arise when severe short channel effects begin to show up when the channel lengths and dimension of the conventional planar MOSFET are scaled down to shorter. The research of alternate device has results on the invention of the FinFet, considered as a variant of the conventional planar MOSFET but more resilient to short channel effects. In this work, we focus on the symmetrical double gate FET (SDGFET) using a Drift-Diffusion model, resolved self-consistently. This model was designed for charged particles motion equation in nanodevices, where important effects such as quantum confinement, diffusive transport and electrostatic interaction are considered. It is found that the characteristic of the SDGFET is depending on different parameters, in particular the thickness of the oxide layer and also the most important external parameter: temperature.