Noise Analysis for UltraWideBand Low Noise Amplifiers

2007 Canadian Conference on Electrical and Computer Engineering Pub Date : 2007-04-22 DOI:10.1109/CCECE.2007.281

M. Zargham, V. Gaudet

引用次数: 0

Abstract

Noise performance is the most important property of any low noise amplifier. Different conventional cascode ultrawideband 3.1-10.6 GHz low noise amplifier (LNA) topologies have been studied and compared in terms of noise figure (NF). The effect of an inductive inner stage on noise has been discussed. A novel two by two linear correlated matrix has been assumed for deriving correlation impedances of the Noise Figure. All simulations are based on a typical 0.18-mum CMOS process.

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超宽带低噪声放大器的噪声分析

噪声性能是任何低噪声放大器最重要的性能。研究了不同传统级联超宽带3.1 ~ 10.6 GHz低噪声放大器拓扑结构的噪声系数(NF)。讨论了电感式内级对噪声的影响。本文假设了一种新的二乘二线性相关矩阵来推导噪声图的相关阻抗。所有模拟都基于典型的0.18 μ m CMOS工艺。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2007 Canadian Conference on Electrical and Computer Engineering

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