Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer

Abstract

We report quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers, instead of proton implantation. A n-GaAs buffer and a 2-/spl mu/m-thick p-GaAs QW layer for current blocking were grown on (100) GaAs substrates. Structure and optical properties of the QWR have been investigated using transmission electron microscopy (TEM) and low temperature photoluminescence (PL).