Experimental investigation on 3D metal interconnection for HySiF(hybrid system in flexible) devices using electrohydrodynamic(EHD) system

Joon Yub Song, Yongjin Kim, Jae Hak Lee, S. Kim
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引用次数: 2

Abstract

For many years, it has been accepted that the flexible applications can not show high device performance and efficiency due to its inherent material issues while the Si based chips present a totally different aspect (high performance but low flexibility). However, recently, this conventional stereotype is being challenged because the new concept called HySiF (hybrid system in flexible) devices merges two different aspect of the benefits such as high device performance and high mechanical flexibility. In addition, the HySiF devices can also be applied to various applications such as wearable devices, sweat sensors, flexible displays, smart cards, etc which is why this new technical trend starts drawing tremendous attention from many people and research fields. However, while there are diverse technical challenges to commercialize the HySiF devices, we are trying to focus on the fabrication of producing Ag based 3D step-covered metal interconnection using a electrohydrodynamic (EHD) system targeting for the electrical connection between any types of functional Si based chips on a flexible substrate. In order to create 3D step-covered metal interconnection, we control the line width (10∼50 μm) hy optimizing the EHD parameters (flow rate:μl/min, working height: μm, applied voltage: kV, velocity: mm/s, acceleration: mm/s2) that covers various step heights (0 μm ∼ 10 μm) utilizing the Ag nanoparticle based metal ink with a control of the sintering temperature less than 200 °C. As a specific application, 5 μm thick micro-LED chips with a 4×4 array were roll-transferred on the PI substrate and were successfully interconnected using the Ag metal ink sintered at 150 °C maintaining its electrical device performance even under the bending condition (diameter=5mm). As a result, we expect that our work can create lots of opportunities for any kinds of future HySiF applications by eliminating the face-up 3D interconnection issues.
基于电流体动力(EHD)系统的HySiF(hybrid system in flexible)器件三维金属互连实验研究
多年来,人们一直认为柔性应用由于其固有的材料问题而不能表现出高的器件性能和效率,而硅基芯片则呈现出完全不同的一面(高性能但低柔性)。然而,最近,这种传统的刻板印象正在受到挑战,因为称为HySiF(柔性混合系统)设备的新概念融合了高设备性能和高机械灵活性等两个不同方面的优势。此外,HySiF设备还可以应用于各种应用,如可穿戴设备,汗液传感器,柔性显示器,智能卡等,这就是为什么这一新的技术趋势开始引起许多人和研究领域的极大关注。然而,虽然HySiF设备的商业化存在各种技术挑战,但我们正试图专注于使用电流体动力学(EHD)系统来生产基于银的3D台阶覆盖金属互连,该系统针对的是柔性衬底上任何类型的功能性硅基芯片之间的电气连接。为了创建三维台阶覆盖金属互连,我们通过优化覆盖不同台阶高度(0 μl ~ 10 μm)的EHD参数(流量:μl/min,工作高度:μm,施加电压:kV,速度:mm/s,加速度:mm/s2)来控制线宽(10 ~ 50 μm),并将烧结温度控制在200℃以下。作为一个具体的应用,5 μm厚的4×4阵列微型led芯片在PI衬底上滚转,并使用150°C烧结的Ag金属油墨成功互连,即使在弯曲条件下(直径=5mm)也能保持其电气器件性能。因此,我们希望通过消除正面3D互连问题,我们的工作可以为未来任何类型的HySiF应用创造大量机会。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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