FTIR, EPMA, Auger, and XPS analysis of impurity precipitates in CdS films

J. Webb, D. Rose, D. Niles, A. Swartzlander, M. Al‐Jassim
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引用次数: 3

Abstract

Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Films of CdS grown using chemical bath deposition (CBD) generally yield better devices than purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdS films. In this work, we present Fourier transform infrared (FTIR), Auger, electron microprobe (EPMA), X-ray photoelectron spectroscopic (XPS), and secondary ion mass spectroscopic (SIMS) analyses of the impurities in CBD CdS films, and show that these differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 10/sup 2/ micron-scale precipitates.
FTIR, EPMA,俄歇和XPS分析cd薄膜中的杂质沉淀
在铜(铟,镓)二硒化(CIGS)和碲化镉(CdTe)光伏器件的制造中,硫化镉(cd)薄膜中的杂质是一个值得关注的问题。使用化学浴沉积(CBD)生长的CdS薄膜通常比使用真空沉积技术生长的纯CdS薄膜产生更好的器件,尽管在CBD CdS薄膜中通常观察到更高的杂质浓度。在这项工作中,我们对CBD CdS薄膜中的杂质进行了傅里叶变换红外(FTIR)、俄歇(Auger)、电子探针(EPMA)、x射线光电子能谱(XPS)和二次离子质谱(SIMS)分析,并表明这些杂质随衬底类型和薄膜沉积条件的不同而不同。我们还表明,其中一些杂质以10/sup /微米尺度的沉淀物存在。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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