Gurgen Harutunyan, S. Shoukourian, V. Vardanian, Y. Zorian
{"title":"Extending fault periodicity table for testing faults in memories under 20nm","authors":"Gurgen Harutunyan, S. Shoukourian, V. Vardanian, Y. Zorian","doi":"10.1109/EWDTS.2014.7027088","DOIUrl":null,"url":null,"abstract":"A new solution for building memory BIST infrastructure, based on rules of fault periodicity and regularity in test algorithms was introduced recently. These rules are represented in a form of a Fault Periodicity Table (FPT) considering both known and unknown memory faults in one table. Each column of FPT corresponds to a fault nature which can be associated with a variety of different test mechanisms while each row of FPT corresponds to a fault family determined by the complexity of fault sensitization. In this paper, application of the proposed methodology for description of memory faults in technologies below 20nm, including 16/14nm FinFET-based memories, is shown. Specifically, it is shown that all recently discovered FinFET-specific faults successfully fit into FPT.","PeriodicalId":272780,"journal":{"name":"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2014.7027088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
A new solution for building memory BIST infrastructure, based on rules of fault periodicity and regularity in test algorithms was introduced recently. These rules are represented in a form of a Fault Periodicity Table (FPT) considering both known and unknown memory faults in one table. Each column of FPT corresponds to a fault nature which can be associated with a variety of different test mechanisms while each row of FPT corresponds to a fault family determined by the complexity of fault sensitization. In this paper, application of the proposed methodology for description of memory faults in technologies below 20nm, including 16/14nm FinFET-based memories, is shown. Specifically, it is shown that all recently discovered FinFET-specific faults successfully fit into FPT.