All injection level transmission line model of minority-carrier transport

Abstract

The method of modeling all injection level minority carrier transport in the arbitrarily doped base quasi-neutral region of bipolar transistors by the equivalent inhomogeneous lossy transmission line (TL) is summarized. Contrary to presently available all injection level collector current models, our TL method is more general since it includes both the Webster and Kirk effects. It was found that the Kirk effect significantly influences base minority-carrier transport in the medium- as well as high-level injection region, and by no means can be neglected in modeling high-injection effects. The accuracy of the TL model is accessed by comparing collector currents calculated by the TL model with those obtained by a standard ID numerical simulator (SEDAN) and by experimental data.