Unified texturization method for mono- and multi-crystalline silicon solar cells

D. Dimitrov, D.-C. Wu, C. Lin
{"title":"Unified texturization method for mono- and multi-crystalline silicon solar cells","authors":"D. Dimitrov, D.-C. Wu, C. Lin","doi":"10.1109/PVSC.2011.6186130","DOIUrl":null,"url":null,"abstract":"A texturization method suitable for both c- and mc-Si is developed. The method is applied on as-cut wafers and is found to be suitable for combined saw damage removal and texture formation. The texturization with inverted surface structures was obtained using wet chemistry process sequence at room temperatures without using a mask and lithography. Potential for an improvement of the standard screen — printing cells performance by incorporation of the new developed texturization method is demonstrated.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 37th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2011.6186130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

A texturization method suitable for both c- and mc-Si is developed. The method is applied on as-cut wafers and is found to be suitable for combined saw damage removal and texture formation. The texturization with inverted surface structures was obtained using wet chemistry process sequence at room temperatures without using a mask and lithography. Potential for an improvement of the standard screen — printing cells performance by incorporation of the new developed texturization method is demonstrated.
单晶硅和多晶硅太阳能电池的统一织构化方法
提出了一种同时适用于c- si和mc-Si的织构化方法。将该方法应用于切割后的晶片上,发现该方法适用于锯切损伤去除和织构形成的结合。在室温条件下,不使用掩模和光刻,采用湿化学工艺序列获得了具有倒表面结构的织构。通过结合新开发的织构化方法,证明了改进标准丝网印刷单元性能的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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