The phonon drag effect on thermopower in p-CdTe

Abstract

Cadmium telluride (CdTe) is a wide band-gap semiconductor which has many applications in various fields, from detectors of nuclear radiation to infra-red diodes and solar cells. The aim of this paper is to describe the new observed experimental effect-the influence of temperature gradient /spl Delta/T on the electrical properties of the systems: Au/p-CdTe/Au (Au/CT/Au), Au/p-Cd/sub 0.96/Zn/sub 0.04/Te/Au (Au/CZT/Au). Its explanation based on theory, the role of non-equilibrium carriers appearing due to /spl Delta/T, is given. The interpretation of the results is based on extended thermo emission-diffusion theories of charge carrier transport through a Schottky diode structure. The influence of Richardson constant was also considered for carriers passing from the metal into the semiconductor.