Advanced VLSI Circuits Simulation

Abstract

The paper deals with very accurate and effective simulation of Complementary Metal-Oxide-Semiconductor (CMOS) transistors which are used to construct basic logic gates (inverter, NAND and NOR) and their composites (XOR, AND, OR). The transistors are substituted by a resistor-capacitor (RC) circuit and the circuit is described by a system of differential algebraic equations (DAEs). These equations are numerically solved by the variable-step, variable-order Modern Taylor Series Method (MTSM). The same approach can be used for VLSI simulation — it was implemented by the corresponding author in a general purpose programming language. This approach is faster than the state of the art (SPICE) and uses less memory.