A comparison of FinFET based FPGA LUT designs

M. Abusultan, S. Khatri
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引用次数: 6

Abstract

The FinFET device has gained much traction in recent VLSI designs. In the FinFET device, the conduction channel is vertical, unlike a traditional bulk MOSFET, in which the conduction channel is planar. This yields several benefits, and as a consequence, it is expected that most VLSI designs will utilize FinFETs from the 20nm node and beyond. Despite the fact that several research papers have reported FinFET based circuit and layout realizations for popular circuit blocks, there has been no reported work on the use of FinFETs for Field Programmable Gate Array (FPGA) designs. The key circuit in the FPGA that enables programmability is the n-input Look-up Table (LUT). An n-input LUT can implement any logic function of up to n inputs. In this paper, we present an evaluation of several FPGA LUT designs. We compare these designs from a performance (delay, power, energy) as well as an area perspective. Comparisons are conducted with respect to a bulk based LUT as well. Our results demonstrate that all the FinFET based LUTs exhibit better delays and energy than the bulk based LUT. Based on our comparisons, we have two winning candidate LUTs, one for high performance designs (3X faster than a bulk based LUT) and another for low energy, area constrained designs (83% energy and 58% area compared to a bulk based LUT).
基于FinFET的FPGA LUT设计比较
FinFET器件在最近的VLSI设计中获得了很大的吸引力。在FinFET器件中,导通通道是垂直的,而不像传统的大块MOSFET器件中,导通通道是平面的。这带来了几个好处,因此,预计大多数VLSI设计将使用20nm及以上节点的finfet。尽管有几篇研究论文报道了基于FinFET的电路和流行电路块的布局实现,但还没有关于将FinFET用于现场可编程门阵列(FPGA)设计的报道。FPGA中实现可编程性的关键电路是n输入查找表(LUT)。n输入LUT可以实现最多n个输入的任何逻辑函数。在本文中,我们对几种FPGA LUT设计进行了评估。我们从性能(延迟、功率、能量)和面积角度比较这些设计。对基于批量的LUT也进行了比较。我们的结果表明,所有基于FinFET的LUT都比基于块体的LUT具有更好的延迟和能量。根据我们的比较,我们有两个获胜的候选LUT,一个用于高性能设计(比基于批量的LUT快3倍),另一个用于低能量,面积受限的设计(与基于批量的LUT相比,能量为83%,面积为58%)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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