Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions

Abstract

Ferroelectric Tunnel Junctions (FTJs) operating as memristors are promising electron devices to realize artificial synapses for neuromorphic computing. But the understanding of their operation requires an in-depth electrical characterization. In this work, an inhouse experimental setup is employed along with novel experimental methodologies to investigate the largesignal (LS) and small-signal (AC) responses of FTJs. For the first time, our experiments and physics-based simulations help to explain the discrepancies between LS and AC experiments reported in previous literature.