Surface Texture of Thin Gallium Nitride Grown on Closed to Van Der Wall Layer of Molybdenum Disulfide

Abstract

: A comprehensive analysis of surface texture of gallium nitride (GaN) films grown on the MoS 2 layer via plasma-assisted molecular beam epitaxy was performed. Scanning electron microscopy (SEM) was used to explore the surface morphology of GaN films. The smooth surface with attending the amount of Ga particle created on the GaN films. The great of Ga-N bonding elements more than 80 % explored by XPS core level (CL) 3d Ga was also obtained in the GaN films. Moreover, investigating the results of surface contour by atomic force microscopic (AFM) exhibited a smoother surface texture with RMS of 2.17 nm for scan area 3 x 3 µm. Finally, the higher growth temperature served by substrate could facilitate the smoother surface with the minimum of Ga metallic.