Development of Multilayered SrTiO3 Thin-Film Capacitors For Embedded Passive Applications

Shuqiang Wang, A. Hattori, Y. Ozeki, H. Ogawa
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Abstract

Multilayered thin-film capacitors (MLTFC) with SrTiO3 (STO) dielectric and Pt electrode thin layers were fabricated on polycrystalline alumina substrates, in which amorphous STO dielectric thin layers with thicknesses of 100-300 nm were formed using a cost-effective aerosol chemical vapor deposition (ASCVD) method. The MLTFC with up to ten-layer dielectric layers and total thickness of 0.2-0.25 mm, reached capacitance densities of 100-900 nF/cm2. Further increase in capacitance density of the MLTFC was tried by reduction in thickness and crystallization of STO dielectric thin layers. Three forms of MLTFC (chips, sheets and substrates) are being developed for embedded passive applications.
嵌入式被动应用多层SrTiO3薄膜电容器的研制
采用高性价比的气溶胶化学气相沉积(ASCVD)方法,在多晶氧化铝衬底上制备了SrTiO3 (STO)介质和Pt电极薄层的多层薄膜电容器(MLTFC)。MLTFC具有多达10层的介电层,总厚度为0.2-0.25 mm,电容密度达到100-900 nF/cm2。通过减小STO介电薄层的厚度和结晶,进一步提高了MLTFC的电容密度。三种形式的MLTFC(芯片,片和基板)正在开发用于嵌入式无源应用。
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