Novel ultra low voltage semi floating-gate passband transconductance amplifier

Y. Berg
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引用次数: 7

Abstract

An ultra low voltage differential transconductance amplifier based on clocked binary and analog iverters is presented. Supply voltages down to 250mV can be applied. Clocked semi-floating-gate binary inverters used for ultra low voltage digital logic are exploted to obtain analog inverting gates. The ultra low voltage amplifier perform a passband operation where the passband is dependent on the applied current level. The gates used resemble precharge CMOS logic where the cuirrent level is determined by offset voltages and the precharge level is determined by the supply voltage provided by the clock signals applied. Simulated data presented are valid for a 90nm STM CMOS process.
一种新型超低电压半浮栅通带跨导放大器
提出了一种基于时钟二进制和模拟逆变器的超低电压差分跨导放大器。电源电压可低至250mV。开发了用于超低电压数字逻辑的时钟半浮门二进制逆变器,以获得模拟反相门。超低电压放大器执行通带操作,其中通带依赖于施加的电流水平。使用的门类似于预充CMOS逻辑,其中电流水平由偏移电压决定,预充水平由应用时钟信号提供的电源电压决定。所提出的模拟数据对于90nm STM CMOS工艺是有效的。
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