Effects of Programming Variations on Nichrome Link PROMS

T. M. Donnelly, W. W. Powell, J. Dobson, J. Devaney
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引用次数: 1

Abstract

Devices from two separate PROM manufacturers utilizing nichrome technology were subjected to variations in programming pulses to determine effects on the fusible links. After programming, devices were chemically etched and a Scanning Electron Microscope (SEM) analysis was conducted on the selectively programmed fuses. A rectangular pulse corresponding to the vendors programming specification was used to program the fuses. However, during programming the pulse amplitude was adjusted to simulate the effect of variations in energy levels delivered by the on-chip addressing circuitry to the fusible links. The amplitudes were adjusted to extend the time required for fusing to a range of 100 ¿s to several seconds. Under SEM examination, the appearance of the fused gaps could be correlated to the fusing time during programming. A description of experiments performed, along with SEM photographs-are presented.
编程变化对镍铬链接prom的影响
采用镍铬合金技术的两家独立PROM制造商的器件受到编程脉冲的变化,以确定对易熔连接的影响。编程完成后,对器件进行化学蚀刻,并对选择性编程的熔断器进行扫描电镜(SEM)分析。采用符合厂商编程规范的矩形脉冲对熔断器进行编程。然而,在编程过程中,调整脉冲幅度以模拟芯片上寻址电路向易熔链路传递的能级变化的影响。调整了振幅,将聚变所需的时间延长到100秒到几秒的范围。在扫描电镜下,熔合间隙的出现与编程过程中熔合时间有关。描述的实验进行,随着扫描电镜照片,提出。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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