300 GHz six-stage differential-mode amplifier

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI:10.1109/MWSYM.2010.5518084

H. Park, J. Rieh, M. Kim, J. Hacker

引用次数: 17

Abstract

A 300 GHz amplifier is fabricated using indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The cascade chain in the amplifier contains six unit cells each containing a pair of common-base DHBTs in differential configuration. A total of three signal lines run through to the unit-cell to obtain the differential-mode amplifier gain and provide proper dc bias. Measured results show the peak gain of 17.3 dB at 290 GHz with 10-dB gain-bandwidth of 20 GHz.

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300ghz 6级差模放大器

采用磷化铟(InP)双异质结双极晶体管(DHBT)技术制备了300ghz放大器。放大器中的级联链包含六个单元格，每个单元格包含一对差分配置的共基dhbt。总共有三条信号线穿过单元格，以获得差模放大器增益并提供适当的直流偏置。测量结果表明，290 GHz时的峰值增益为17.3 dB, 10 dB增益带宽为20 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 IEEE MTT-S International Microwave Symposium

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