Effects of terahertz radiation generation by homogeneous laser-excited semiconductors

Abstract

Theoretical explanation of magnetic field impact on terahertz radiation generation by femtosecond-laser-excited narrow band-gap semiconductors is proposed. Surface depletion electric field screening influence on terahertz emission by means of nonlinear optical rectification is analyzed. Free-carrier electro-optical effect in semiconductors in the presence of the constant electric field is investigated.