Sub-0.1-/spl mu/m Patterning Characteristics of Inorganic Resists by Focused-Ion-Beam Lithography

Abstract

Every year, m and more, many Focused-ion-be characteristics of various importan we anticipate tha lon-bcan litho] for sub-0.lpm ell patterns or mas1 obtain a clear-an water vapors as development is i the undercutting recently present< Carlo(MC) simL penetration into In previous F characteristics, ti exposure and by duality according on the energy dj case of RIE dev The Zmin optir resists, respectiv ,?,,,-thick inorga Though these process, high c( sensitivity 1-2 ( be solved, espec As one study the columnar-sti development. Tl15C-6-18