High speed semi-insulating GaInAsP laser processing

Abstract

Semi-insulating (SI) planar buried heterostructure (SIPBH) lasers, designed to minimize device parasitics, have been fabricated for high-speed operation. The I-V characteristics of the Fe-doped SI InP employed for the current blocking layers were examined at elevated temperatures associated with high speed laser operation. It was found that the trap filled voltage, V/sub TF/, decreases linearly with increasing temperature. However, a SI InP layer with a V/sub TF/ at room temperature of 70 V demonstrated current blocking characteristics to temperatures in excess of 150 degrees C.<>