Forming-free titanium oxide neuromorphic crossbar array for robotics and AI systems

2022 6th Scientific School Dynamics of Complex Networks and their Applications (DCNA) Pub Date : 2022-09-14 DOI:10.1109/DCNA56428.2022.9923309

V. Avilov, Z. Vakulov, Aleksandr Fedotov, R. Tominov, N. Polupanov, V. Smirnov

引用次数: 0

Abstract

The article shows the fabrication and study of 4×4 neuromorphic crossbar array Ti/TiO2/Cu. Memristors demonstrated resistive switching without any additional forming operations. The crossbar array exhibits multilevel switching at different Uset = 1.0 V, 1.5 V, and 2.0 V. The results obtained can be used in the fabrication of a forming-free titanium oxide neuromorphic crossbar array for robotics and artificial intelligence systems.

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用于机器人和人工智能系统的免成形氧化钛神经形态横杆阵列

本文介绍了4×4神经形态交叉棒阵列Ti/TiO2/Cu的制备与研究。忆阻器演示了电阻开关，无需任何额外的成形操作。交叉棒阵列在1.0 V、1.5 V和2.0 V的不同用户设置下显示多电平开关。所得结果可用于制造用于机器人和人工智能系统的无成形氧化钛神经形态横杆阵列。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2022 6th Scientific School Dynamics of Complex Networks and their Applications (DCNA)

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