On the fabrication of aluminum doped silica preform using MCVD and solution doping technique

S. M. Aljamimi, M. S. Anuar, S. Z. Muhd-Yasin, M. I. Zulkifli, N. Tamchek, Z. Yusoff, H. Abdul-Rashid
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Abstract

This paper provides detailed discussions on the fabrication of aluminum doped silica preform using solution doping technique and modified chemical vapor deposition (MCVD). The porous core layer was deposited at 1750°C with 30cm in deposition length. The soot formed at the inlet and outlet segment of the deposited length is analyzed using SEM for soot size and BET for pore size distribution. Refractive index profile of the doped preform is measured using preform analyzer. The refractive index difference obtained at the outlet and inlet segments shows uniform distribution of Al2O3, in agreement with the pore size distribution.
用MCVD和溶液掺杂技术制备铝掺杂二氧化硅预制体
本文详细讨论了采用溶液掺杂技术和改性化学气相沉积(MCVD)技术制备铝掺杂二氧化硅预制体的方法。多孔芯层沉积温度为1750℃,沉积长度为30cm。利用扫描电镜(SEM)分析了沉积长度入口段和出口段形成的烟尘尺寸,并用BET分析了孔径分布。利用预成形分析仪测量了掺杂预成形的折射率分布。在出口和进口段的折射率差显示Al2O3的均匀分布,与孔径分布一致。
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