Far infrared photoconductivity experiments on the si donor in gaas

Abstract

The far infrared photoconductivity of Si doped GaAs has been studied using an optically pumped FIR laser working in the 10-150 cm range. At temperatures between H and 10 K in magnetic fields up to 12 T an almost complete set of transitions from the shallow (Si) donor groundstate to the excited hydrogenic levels (n = 2,3,4) is observed. The obtained field dependence of the energy levels is in good agreement with theoretical calculations.