The Optimal Estimation of Single Event Effects Sensitivity Parameters Using a Focused Laser Source and Heavy Ion Cyclotron on Example of a Library of Analog IP Units

Abstract

The sensitivity parameters based on the single event effects (SEE) for a library consisting of 51 analog and analog-to-digital IP units manufactured using CMOS/SOI technology with design standards of 180 nm were evaluated. The use of a pulsed picosecond focused laser facility "PICO-4" in determining the sensitivity parameters made it possible to minimize the use of a heavy ion cyclotron. When a focused laser source and a heavy ion cyclotron are used together, the location of the most sensitive areas on the crystal is determined, which is impossible when using only a cyclotron, while the error in determining the threshold linear energy transfer for the occurrence of SEE is reduced. Using a focused laser source, sensitive regions of IP units with threshold values of linear energy losses that are unattainable when conducting an experiment on a heavy ion cyclotron are determined.