Dielectric behavior and non-ohmic behavior of CCTO/SiO2 composites

2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM) Pub Date : 2017-05-01 DOI:10.1109/ISAF.2017.8000221

H. Talebinezhad, Y. Tong, X. Lu, Z. Cheng

{"title":"Dielectric behavior and non-ohmic behavior of CCTO/SiO2 composites","authors":"H. Talebinezhad, Y. Tong, X. Lu, Z. Cheng","doi":"10.1109/ISAF.2017.8000221","DOIUrl":null,"url":null,"abstract":"In this study, the electrical behavior of CCTO/SiO2 composites have been analyzed. The ceramic composite was made of CaCu3Ti4O12 coated with SiO2 by sol-gel method. The composites were made of SiO2 concentration and sintered in different temperature. The effect of SiO2 concentration and sintering temperature on the microstructure and non-ohmic behavior of composites were investigated. The breakdown electrical field for composite of CCTO can improve from 1.96 KV/cm to 40 KV/cm by adding SiO2 due to the formation of a resistive layer in grainboundaries. The nonlinear coefficient of the sample is influenced by changing the Schottky barrier parameters to reach 3.8, which is predicted by conductivity behavior. It is believed that, the formation of the liquid phase caused the increase in diffusion which altered the conductivity of grainboundaries and affected the height and width of the potential barrier. The SEM pictures were conducted to illustrate the change in the microstructure of samples. The increase in the sintering temperature and emerge liquid phase results in grain growth.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"321 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2017.8000221","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

In this study, the electrical behavior of CCTO/SiO2 composites have been analyzed. The ceramic composite was made of CaCu3Ti4O12 coated with SiO2 by sol-gel method. The composites were made of SiO2 concentration and sintered in different temperature. The effect of SiO2 concentration and sintering temperature on the microstructure and non-ohmic behavior of composites were investigated. The breakdown electrical field for composite of CCTO can improve from 1.96 KV/cm to 40 KV/cm by adding SiO2 due to the formation of a resistive layer in grainboundaries. The nonlinear coefficient of the sample is influenced by changing the Schottky barrier parameters to reach 3.8, which is predicted by conductivity behavior. It is believed that, the formation of the liquid phase caused the increase in diffusion which altered the conductivity of grainboundaries and affected the height and width of the potential barrier. The SEM pictures were conducted to illustrate the change in the microstructure of samples. The increase in the sintering temperature and emerge liquid phase results in grain growth.

查看原文本刊更多论文

CCTO/SiO2复合材料的介电行为和非欧姆行为

本研究分析了CCTO/SiO2复合材料的电学行为。采用溶胶-凝胶法制备了ccu3ti4o12包覆SiO2的陶瓷复合材料。制备了不同SiO2浓度的复合材料，并在不同温度下烧结。研究了SiO2浓度和烧结温度对复合材料微观结构和非欧姆行为的影响。SiO2的加入可使复合材料的击穿电场由1.96 KV/cm提高到40 KV/cm，这是由于在晶界处形成了一层电阻层。改变肖特基势垒参数后，样品的非线性系数达到3.8，这是由电导率行为预测的。认为液相的形成引起扩散的增加，从而改变了晶界的电导率，影响了势垒的高度和宽度。通过扫描电镜(SEM)分析了试样的微观结构变化。烧结温度的升高和液相的出现导致晶粒长大。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)

自引率

0.00%

发文量