Numerical Simulation of Quantum Efficiency of Cd0.8Zn0.2S /CIGS Solar Cells

Abstract

The paper presents a simulation study using the numerical simulator SCAPS-1D to model ZnO/Cd 0.8 Zn 0.2 S/CuIn (1-y) Ga y Se 2 /CuInSe 2 structures. Effects of thickness of graded and ungraded CIGS absorbers and buffer layers on cell performance have been investigated with the aim to reach a higher efficiency. Quantum efficiency (QE) as function of wavelength and thickness of these layers was studied . The high efficiency of CIGS cells, in order of 22.05%, has reached with the absorbers thickness between 2I¼m and 3.5I¼m and with acceptor concentration of about 2.10 16 cm 3 . Other hand, we investigate the effect of Cd 0.8 Zn 0.2 S ternary compound buffer on the top of the p-CIGS cell. These simulation results give some important indication to enable further development of multilayer thin-film solar cells based on CuInGaSe 2 with Cd 0.8 Zn 0.2 S as buffer layer instead of CdS