Scalable bipolar transistor model including quasi-saturation effect for BiCMOS application

Abstract

A Gummel-Poon like bipolar transistor model including effects of quasi-saturation is derived. The model includes multi-dimensional effects such as sidewall injection, emitter current crowding, and collector current spreading. A current-dependent epi-layer collector resistance is proposed to model collector conductivity modulation in quasi-saturation. The model has been compared with measurement. Good agreement between the model predictions and experimental data has been obtained.