The Planar-Doped-Barrier-FET: MOSFET Overcomes Conventional Limitations

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194506

W. Hansch, V. Rao, I. Eisele

引用次数: 3

Abstract

Introducing a concept of Electric-Field-Tailoring in vertical grown MOSFETs significant improvements concerning supply voltage, current and speed are possible. Based on vertical Silicon MOSFETs with sub-100nm channel lengths Planar-Doped-BarrierFETs were fabricated. Investigations on electrical characteristics and carrier transport show the predicted improvements compared to classical MOSFETs.

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平面掺杂势垒场效应管:MOSFET克服了传统的限制

在垂直生长的mosfet中引入电场剪裁的概念，可以显著改善电源电压，电流和速度。在沟道长度低于100nm的垂直硅mosfet的基础上，制备了平面掺杂势垒场效应管。对电特性和载流子输运的研究表明，与经典mosfet相比，预测的改进。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

27th European Solid-State Device Research Conference

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