Towards 100 nm Band NIR SLDs

Canterbury Workshop and School in Optical Coherence Tomography and Adaptive Optics Pub Date : 2008-09-26 DOI:10.1117/12.811864

Yu. O. Kostin, P. I. Lapin, V. V. Prokhorov, V. R. Shidlovsky, S. Yakubovich

引用次数: 6

Abstract

The results of recent studies of superluminescent diodes (SLDs) based on new quantum-well (QW) (GaAl)As and (InGa)As heterostructures of spectral range 800 - 900 nm with spectral bandwidths of up to 80 nm and output power ex SM fiber of up to 50 mW are presented.

查看原文本刊更多论文

迈向100nm波段近红外sld

本文介绍了基于新型量子阱(QW) (GaAl)As和(InGa)As异质结构的超发光二极管(SLDs)的最新研究成果，其光谱范围为800 ~ 900 nm，光谱带宽可达80 nm, SM光纤输出功率可达50 mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Canterbury Workshop and School in Optical Coherence Tomography and Adaptive Optics

自引率

0.00%

发文量